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AS1360-40-T Datasheet(PDF) 9 Page - ams AG |
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AS1360-40-T Datasheet(HTML) 9 Page - ams AG |
9 / 14 page www.austriamicrosystems.com/LDOs/AS1360 Revision 1.07 8 - 13 AS1360 Datasheet - A p p l i c a t i o n I n f o r m a t i o n 9 Application Information Figure 14. AS1360 - Typical Application Diagram Power Dissipation Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent current required to bias the internal voltage reference and the internal power amplifier, and is calculated as: PD (P-Channel MOSFET) = (VIN - VOUT)IOUT (EQ 1) Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as: PD (Bias) = VINIGND (EQ 2) Total AS1360 power dissipation is calculated as: PD(Total) = PD (P-Channel MOSFET) + PD (Bias) (EQ 3) The internal quiescent bias current (2 A, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the maximum power dissipation can be estimated using VIN(MAX) and VOUT(MIN) to obtain a maximum voltage differential between VIN and VOUT, and multiplying the maxi- mum voltage differential by the maximum output current: PD = (VIN(MAX)VOUT(MIN))IOUT(MAX) (EQ 4) Where: VIN = 3.3 to 4.1V VOUT = 3.0V ±2% IOUT = 1 to 100mA TAMB(MAX) = 55ºC PMAX = (4.1V - (3.0V x 0.98)) x 100mA = 116.0mW Junction Temperature The AS1360 junction temperature (TJ) can be determined by first calculating the thermal resistance from junction temperature-to-ambient tem- perature. Note: Thermal resistance is estimated to be the junction temperature-to-air temperature R ΦJA, and is approximately 230°C/W or 335ºC/W (when mounted on 1 square inch of copper). R ΦJA will vary depending on PCB layout, air-flow and application specific conditions. The AS1360 junction temperature is determined by calculating the rise in TJ above TAMB, and then adding the increase of TAMB: TJ = PD(MAX) x R ΦJA + TAMB (EQ 5) From (EQ 5), the value of TJ can be calculated as: TJ = 116.0mW x 230ºC/W + 55ºC Therefore: TJ = 81.68ºC AS1360 +9V Alkaline Battery GND 1 3 VIN 2 VOUT COUT 1µF * CIN 1µF * * Tantalum Capacitor VOUT = 3.3V |
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