SPN8882_11 datasheet(3/9 Pages) SYNC-POWER

Part #	SPN8882

Description	N-Channel Enhancement Mode MOSFET

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Manufacturer	SYNC-POWER [SYNC POWER Crop.]

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3 / 9 page

2011/04/19

Ver.4

Page 3

SPN8882

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25

Unless otherwise noted)

℃

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS VGS = 0V , ID =250uA

30

Gate Threshold Voltage

VGS(th) VDS = VGS,IDS =250uA

0.8

2.4

V

Gate Leakage Current

IGSS

VDS = 0V,VGS = ±20 V

±100

nA

VDS = 24V,VGS =0V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 24V,VGS =0V,

TJ = 125C

100

uA

VGS = 10V, ID = 35A

0.008

0.010

Drain-Source On-Resistance

RDS(on)

VGS = 4.5V, ID = 35A

0.012

0.014

Ω

Forward Transconductance

gfs

VDS = 15V, ID =20 A

10

S

Diode Forward Voltage

VSD

IF = 40 A,VGS = 0V

1.0

1.5

V

Dynamic

Total Gate Charge

Qg

12

20

Gate-Source Charge

Qgs

4

Gate-Drain Charge

Qgd

VDS = 15V,VGS = 5V,

ID =50 A

5

nC

Input Capacitance

Ciss

1500

Output Capacitance

Coss

320

Reverse Transfer Capacitance

Crss

VGS = 0V, VDS = 25V,

F=1MHz

200

pF

td(on)

8

12

Turn-On Time

tr

10

15

td(off)

18

30

Turn-Off Time

tf

(VDD = 15 V,ID = 50 A,

VGS=10V,RG = 2.5Ω)

6

9

ns

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SPN8882 Datasheet(PDF) 3 Page - SYNC POWER Crop.

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