SI4484EY-T1-GE3 datasheet(1/8 Pages) VISHAY

Part #	SI4484EY-T1-GE3

Description	N-Channel 100-V (D-S) MOSFET

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Vishay Siliconix

Si4484EY

Document Number: 71189

S09-1341-Rev. D, 13-Jul-09

www.vishay.com

1

N-Channel 100-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

175 °C Maximum Junction Temperature

•

PWM Optimized

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

100

0.034 at VGS = 10 V

6.9

0.040 at VGS = 6.0 V

6.4

SO-8

D

S

G

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4484EY-T1-E3 (Lead (Pb)-free)

Si4484EY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G

S

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

a

TA = 25 °C

ID

6.9

4.8

A

TA = 85 °C

5.4

3.7

Pulsed Drain Current

IDM

30

Avalanche Current

L = 0.1 mH

IAR

25

Repetitive Avalanche Energy (Duty Cycle

≤ 1 %)

EAR

31

mJ

Continuous Source Current (Diode Conduction)a

IS

3.1

1.5

A

Maximum Power Dissipationa

TA = 25 °C

PD

3.8

1.8

W

TA = 85 °C

2.3

1.1

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

33

40

°C/W

Steady State

70

85

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

17

21

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