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SPP4435 Datasheet(PDF) 3 Page - SYNC POWER Crop. |
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SPP4435 Datasheet(HTML) 3 Page - SYNC POWER Crop. |
3 / 9 page 2011/09/29 Ver.4 Page 3 SPP4435 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) ℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=55℃ -5 uA On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V -40 A VGS=-10V,ID=-9.2A 0.022 0.025 Drain-Source On-Resistance RDS(on) VGS=-4.5V,ID=-7.0A 0.030 0.035 Ω Forward Transconductance gfs VDS=-10V,ID=-9.0A 24 S Diode Forward Voltage VSD IS=-2.3A,VGS =0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 16 24 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID= -9.0A 4.5 nC Input Capacitance Ciss 1650 Output Capacitance Coss 350 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V f=1MHz 235 pF td(on) 16 30 Turn-On Time tr 17 30 td(off) 65 110 Turn-Off Time tf VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 35 80 nS |
Similar Part No. - SPP4435_11 |
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Similar Description - SPP4435_11 |
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