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CL10C470JB8NNNC Datasheet(PDF) 6 Page - Samsung semiconductor |
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CL10C470JB8NNNC Datasheet(HTML) 6 Page - Samsung semiconductor |
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6 / 21 page  NO ITEM PERFORMA NCE TEST CONDIT ION 1 App ea rance No Abnormal Exte rior Appeara n ce Th ro ugh Micr o sco pe(×10) 2 In su la tio n Re sista n ce 10,0 0 0㏁ or 50 0 ㏁·㎌ wh ich e ve r is sma lle r Ra te d Vo lta ge is b e lo w 1 6V ; 10,0 0 0㏁ or 10 0 ㏁·㎌ wh ich e ve r is sma lle r Apply the Ra te d Volta ge Fo r 6 0 ~ 12 0 Sec. 3 W ith standing Voltage No Die le ctric Bre a kd o wn o r Me chanica l Breakd o wn Clas sⅠ : 300 % of the R ated Voltage for 1~ 5 s ec . Clas sⅡ :2 50% of the R ated Voltage for 1~5 s ec . is applied with les s than 5 0㎃ c urrent 4 Capacita nce Cla ss Ⅰ W ith in th e sp e cifie d to le ra n ce Ca pacita nce Fre quency Voltage ≤ 1,000㎊ 1㎒ ±1 0% 0.5 ~ 5 Vrms >1 ,0 00 ㎊ 1㎑ ±1 0% Cla ss Ⅱ W ith in th e specifie d to lerance Ca pacita nce Fre quency Voltage ≤ 10㎌ 1㎑ ±1 0% 1 .0± 0 .2 Vrms >1 0 ㎌ 120 ㎐± 20% 0.5± 0 .1Vrms 5Q Cla ss Ⅰ Ca pacita nce ≥ 30㎊ :Q ≥ 1,000 <3 0㎊ :Q ≥ 40 0 +20 C ( C : Capacitance ) Ca pacita nce Fre quency Voltage ≤ 1,000㎊ 1㎒ ±1 0% 0.5 ~ 5 Vrms >1 ,0 00 ㎊ 1㎑ ±1 0% 6Ta n δ Cla ss Ⅱ 1. Characteristic : A(X5R), B(X7R), X(X6S) 2. Characteristic : F(Y5V) Ca pacita nce Fre quency Voltage ≤ 10㎌ 1㎑ ±1 0% 1 .0± 0 .2 Vrms >1 0 ㎌ 120 ㎐± 20% 0.5± 0 .1Vrms R ated Voltage Spec ≥ 25V 0.025 max 16V 0.035 max 10V 0.05 max 6.3V 0.05 max/ 0.10max* 1 R ated Voltage Spec 50V 0.05 max, 0.07max* 2 35V 0.07 max 25V 0.05 max/ 0.07 max* 3/ 0.09max*4 16V 0.09 max/ 0.125max* 5 10V 0.125 max/ 0.16max* 6 6.3V 0.16max *3 . 04 0 2 C≥ 0.0 3 3u F, 06 03 C>0 .1uF All 0805, 1206 size , 121 0 C ≤ 6.8uF *4 .. 12 10 C>6.8u F *5 .. 04 0 2 C≥0.22u F *6 .. All 1812 size *2 .. 0603 C≥0.47uF, 0 805 C≥1u F *1 . 0201 C≥ 0.022uF, 0 402 C ≥0.22uF, 0 603 C ≥2.2u F, 0805 C ≥4.7 u F, 1206 C≥10uF, 1210 C≥ 22 u F, 1812 C ≥47uF, 22 20 C≥100 uF, All Low Profile Ca p a cito rs (P.1 6). RELIABILTY TEST CONDITION |
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