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CIL10NR18M Datasheet(PDF) 6 Page - Samsung semiconductor |
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CIL10NR18M Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 6 page 42 43 100000 10000 1000 100 10 10 100 1000 1 FREQUENCY(MHZ) DC BIAS(mA) 100 60 80 40 20 1 10 100 1000 0.1 FREQUENCY(MHZ) 10 μ H 1.0 μ H 0.1 μ H 10 μ H 1.0 μ H 0.1 μ H 100 10 1 0.1 10 100 1000 1 10 μ H 1 μ H 0.1 μ H TEMPERATURE( ℃) 16 -16 12 8 4 -12 -25 0 25 50 75 -8 -4 0.1 μ H 10 μ H 1.0 μ H 1.0 μ H 10 μ H 0.1 μ H TEMPERATURE( ℃) 16 -16 12 8 4 -12 -25 0 25 50 75 -8 -4 0.82 μ H 8.2 μ H 4.7 μ H 15 μ H DC BIAS(mA) 100 10 1 0.1 10 100 1000 1 15 μ H 8.2 μ H 4.7 μ H 0.82 μ H ■ IMPEDANCE CHARACTERISTICS ■ Q CHARACTERISTICS ■ DC BIAS CHARACTERISTICS ■ TEMPERATURE CHARACTERISTICS ■ TEMPERATURE CHARACTERISTICS ■ DC BIAS CHARACTERISTICS CIL 3216(1206) Type 100000 10000 1000 100 10 10 100 1000 1 FREQUENCY(MHZ) 80 60 40 20 0 1 10 100 1000 0.1 FREQUENCY(MHZ) 22 μ H 10 μ H 1.0 μ H 0.1 μ H 22 μ H 10 μ H 1.0 μ H 0.1 μ H ■ IMPEDANCE CHARACTERISTICS ■ Q CHARACTERISTICS CIL 2012(0805) Type |
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