Vishay Siliconix

Si7450DP

www.vishay.com

2

Document Number: 71432

S13-0300-Rev. F, 11-Feb-13

This document is subject to change without notice.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

24.5

V

Gate-Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

µA

5

40

A

0.065

0.080



0.070

0.090

19

S

0.75

1.2

V

Total Gate Charge

34

42

nC

Gate-Source Charge

7.5

Gate-Drain Charge

12

Gate Resistance

0.20.851.5



Turn-On Delay Time

14

20

ns

Rise Time

20

30

Turn-Off Delay Time

32

50

Fall Time

25

35

Source-Drain Reverse Recovery

Time

70

100

Output Characteristics

0

8

16

24

32

40

02468

10

5 V

4 V

Transfer Characteristics

0

5

10

15

20

25

30

35

40

0123456

25 °C

- 55 °C