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QID1210006 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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QID1210006 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 7 page 2 QID1210006 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2/7/14 Rev. 3 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol QID1210006 Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 150 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 100* Amperes Peak Collector Current ICM 200* Amperes Emitter Current** (TC = 25°C) IE 80* Amperes Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)** IEM 455* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 570 Watts Mounting Torque, M6 Mounting — 40 in-lb Weight — 130 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 100A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC Input Capacitance Cies — — 16 nf Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.3 nf Reverse Transfer Capacitance Cres — — 0.3 nf Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 100A, — — TBD ns Load Rise Time tr VGE1 = VGE2 = 15V, — — TBD ns Switch Turn-off Delay Time td(off) RG = 3.1Ω, — — TBD ns TimeFall Time tf Inductive Load Switching Operation — — TBD ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi). |
Similar Part No. - QID1210006_14 |
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Similar Description - QID1210006_14 |
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