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QJD1210011 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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QJD1210011 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 7 page 2 QJD1210011 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Preliminary 2/7/14 Rev. 4 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QJD1210011 Units Drain-Source Voltage (G-S Short) VDSS 1200 Volts Gate-Source Voltage VGSS -5 / +25 Volts Drain Current (Continuous) at TC = 150°C ID 100 Amperes Drain Current (Pulsed)* ID(pulse) 250 Amperes Maximum Power Dissipation (TC = 25°C, Tj < 175°C) PD 900 Watts Junction Temperature Tj -40 to 175 °C Storage Temperature Tstg -40 to 150 °C Mounting Torque, M6 Mounting Screws — 40 in-lb Module Weight (Typical) — 140 Grams V Isolation Voltage VRMS 3000 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. |
Similar Part No. - QJD1210011_14 |
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Similar Description - QJD1210011_14 |
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