2

QJD1210011

Split Dual SiC MOSFET Module

100 Amperes/1200 Volts

Preliminary

2/7/14 Rev. 4

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

QJD1210011

Units

Drain-Source Voltage (G-S Short)

VDSS

1200

Volts

Gate-Source Voltage

VGSS

-5 / +25

Volts

Drain Current (Continuous) at TC = 150°C

ID

100

Amperes

Drain Current (Pulsed)*

ID(pulse)

250

Amperes

Maximum Power Dissipation (TC = 25°C, Tj < 175°C)

PD

900

Watts

Junction Temperature

Tj

-40 to 175

°C

Storage Temperature

Tstg

-40 to 150

°C

Mounting Torque, M6 Mounting Screws

—

40

in-lb

Module Weight (Typical)

—

140

Grams

V Isolation Voltage

VRMS

3000

Volts

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.