OPA857IRGTR datasheet(3/29 Pages) TI1

Part #	OPA857IRGTR

Description	Ultralow-Noise, Wideband, Selectable Feedback Resistance Transimpedance Amplifier

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Manufacturer	TI1 [Texas Instruments]

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OPA857

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SBOS630B – DECEMBER 2013 – REVISED JANUARY 2014

ELECTRICAL CHARACTERISTICS: VS+ – VS– = +3.3 V

At TA = +25°C

(1), V

S = +3.3 V, CSource = 1.5 pF, VOUT = 0.5 VP (differential), RL = 500 Ω differential, single-ended input,

pseudo-differential output, and input and output referenced to midsupply, unless otherwise noted.

TEST

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

LEVEL(2)

AC PERFORMANCE

CTRL = 1, TA = –40°C to +85°C

130

MHz

C

Small-signal bandwidth

CTRL = 0, TA = –40°C to +85°C

115

MHz

C

SR

Slew rate (differential)

VOUT = 1-V step

220

V/

μs

C

VOUT = 0.5-V step, CTRL = 0, TA = +25°C

7.2

8.1

ns

B

VOUT = 0.5-V step, CTRL = 0, TA = –40°C to +85°C

8.2

ns

B

Settling time to 1%

VOUT = 0.5-V step, CTRL = 1, TA = +25°C

7.7

8.8

ns

B

tS

VOUT = 0.5-V step, CTRL = 1, TA = –40°C to +85°C

9.1

ns

B

VOUT = 0.5-V step, CTRL = 0

152

ns

C

Settling time to 0.001%

VOUT = 0.5-V step, CTRL = 1

165

ns

C

VOUT = 0.5 VPP, f = 10 MHz, RF = 5 kΩ, TA = +25°C

–94

dBc

C

HD2

Second-harmonic distortion

VOUT = 0.5 VPP, f = 10 MHz, RF = 20 kΩ, TA = +25°C

–81

dBc

C

VOUT = 0.5 VPP, f = 10 MHz, RF = 5 kΩ, TA = +25°C

–97

dBc

C

HD3

Third-harmonic distortion

VOUT = 0.5 VPP, f = 10 MHz, RF = 20 kΩ, TA = +25°C

–101

dBc

C

CTRL = 0, NPBW = 85.7 MHz, with 120-MHz, first-

24.9

nARMS

C

order, antialias filter

Equivalent input-referred current

ieq_RMS

noise

CTRL = 1, NPBW = 85.7 MHz, with 120-MHz, first-

14.7

nARMS

C

order, antialias filter

IIN = 100 µA, CTRL = 1, settling to 1% of final value

Overdrive recovery time

15

ns

B

with 120-MHz, first-order, antialias filter

Closed-loop output impedance

f = 1 MHz (differential)

50

Ω

C

DC PERFORMANCE

CTRL = 1 into 500

Ω(3)(4)

18.2

k

Ω

C

Transimpedance gain

CTRL = 0 into 500

Ω(3)(4)

4.5

k

Ω

C

Transimpedance gain error

TA = +25°C, RF = 20 kΩ and RF = 5 kΩ

±1

±15

%

A

TA = +25°C

±1

±5

mV

A

VOSO

Output offset voltage

TA = –40°C to +85°C

(5)

±6

mV

B

Output offset voltage drift

TA = –40°C to +85°C

(5)

±15

μV/°C

C

VCM

Common-mode voltage

TA = +25°C, OUTN

1.78

1.83

1.88

V

A

INPUT

Input pin capacitance

2

pF

C

OUTPUT

OUTN, TA = +25°C

0.6

1.9

V

A

Output voltage swing

TA = –40°C to +85°C

(5)

1.9

V

B

+5

mA

C

Output current drive (for linear

OUT, differential 50-

Ω between OUT and OUTN

operation)

–20

mA

C

(1)

Junction temperature = ambient for +70°C specifications.

(2)

Test levels: (A) 100% tested at +25°C. Overtemperature limits set by characterization and simulation. (B) Limits set by characterization

and simulation. (C) Typical value only for information.

(3)

See the Application Information section for details on loading and effective transimpedance gain.

(4)

Note that the effective transimpedance gain is reduced to 18.2 k

Ω and 4.5 kΩ, respectively, with a 500-Ω load resulting from the internal

series resistance on OUT and OUTN.

(5)

Junction temperature = ambient at low temperature; junction temperature = ambient +3.5°C for overtemperature specifications.

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