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QIS2510001 Datasheet(PDF) 3 Page - Powerex Power Semiconductors

Part # QIS2510001
Description  Single Discrete IGBT 100 Amperes/2500 Volts
Download  3 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QIS2510001 Datasheet(HTML) 3 Page - Powerex Power Semiconductors

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Preliminary
QIS2510001
Single Discrete IGBT
100 Amperes/2500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
01/10 Rev. 0
0
50
100
150
200
250
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
0
25
50
100
75
125
102
101
100
10-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10-1
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
50
100
150
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
200
GATE CHARGE, QG, (nC)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
0
250
500
750
1000
16
12
8
4
0
VGE = 0V
Tj = 25°C
Cies, Coes: f = 100kHz
Cres: f = 1MHz
VCC = 1250V
IC = 100A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
Tj = 25°C
VCC = 1250V
VGE = ±15V
RG = 30Ω
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE)
OUTPUT CHARACTERISTICS
(TYPICAL)
200
150
0
2
4
8
100
50
0
10
6
200
150
0
4
8
16
100
50
0
20
12
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
Tj = 25°C
Tj = 125°C
Cies
IC = 200A
VGE = 20V
15V
14V
10V
11V
8V
9V
7V
IC = 100A
IC = 40A
Coes
Cres
Eon
Eoff
13V
12V


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