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CSD17571Q2 Datasheet(PDF) 3 Page - Texas Instruments |
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CSD17571Q2 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 11 page  0 5 10 15 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS - Drain-to-Source Voltage (V) VGS = 10V VGS = 6V VGS = 4.5V G001 0 3 6 9 12 15 18 21 24 27 30 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 GATE Source DRAIN M0164-01 GATE Source DRAIN M0164-02 CSD17571Q2 www.ti.com SLPS393 – OCTOBER 2013 Max RθJA = 65 when Max RθJA = 235 when mounted on 1 inch2 mounted on minimum (6.45 cm2) of 2-oz. pad area of 2-oz. (0.071-mm thick) Cu. (0.071-mm thick) Cu. TYPICAL MOSFET CHARACTERISTICS TA = 25°C unless otherwise specified Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD17571Q2 |
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