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PSBM24 Datasheet(PDF) 1 Page - Powersem GmbH

Part # PSBM24
Description  Power MOSFET Stage
Download  2 Pages
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Manufacturer  POWERSEM [Powersem GmbH]
Direct Link  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSBM24 Datasheet(HTML) 1 Page - Powersem GmbH

  PSBM24 Datasheet HTML 1Page - Powersem GmbH PSBM24 Datasheet HTML 2Page - Powersem GmbH  
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Power MOSFET Stage
PSBM 24/05
I
D25
= 35 A
for Boost Converters
V
DSS
= 500 V
Module for Power Factor Correction
R
DS(on)
= 0.12
Features
High level of integration - only one
power semiconductor module required
for the whole PFC rectifier
Isolation voltage 3600 V
Planar glass passivated chips
Ultrafast boost diode
Leads suitable for PC board
soldering
Thermistor (optional)
UL registered, E 148688
Applications
Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
Boost topology for SMPS including
1
∼ rectifier bridge
Power supply for welding equipment
Advantages
Easy to mount with two screws
Space and weight savings
high temperature and power
cycling capability
Small and light weight
3 functions in one package
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Data according to IEC 60747 refer to a single diode
unless otherwise stated
Preliminary Data Sheet
V
RSM
V
RRM
Type
(V)
(V)
600 500
PSBM 24/05
MOSFET
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
VJ = 25 °C to 150 °C
500
V
V
DGR
T
VJ = 25 °C to 150 °C, RGS = 10 Ω
500
V
V
GS
continuous
±20
V
I
D
T
S = 85 °C
24
A
I
D
T
S = 25 °C
35
A
I
DM
T
S = 25 °C, pulse width limited by T
VJ
95
A
P
D
T
S = 85 °C
170
W
I
S
V
GS = 0 V, TS = 25 °C
24
A
I
SM
V
GS = 0 V, TS = 25 °C, pulse width limited by TVJ
95
A
Symbol
Test Conditions
Characteristic Values
T
VJ = 25 °C, unless otherwise specified
V
DSS
V
GS =
0 V, I
D = 2mA
min.
500
V
V
GS(th)
V
DS = 20 V, ID = 20 mA
min.
2
V
V
GS(th)
V
DS = 20 V, ID = 20 mA
max.
5
V
I
GSS
V
GS = ±20 V, VDS = 0 V
max.
±500
nA
I
DSS
V
DS = 500 V, VGS = 0 V
max.
2
mA
R
DS(on)
T
VJ = 25 °C
max.
0.12
R
Gint
T
VJ = 25 °C
max.
1.5
g
fs
V
DS = 15 V, IDS = 12 A
typ.
30
S
V
DS
I
DS
= 24 V, V
GS = 0 V
max.
1.5
V
t
d(on)
V
DS = 250 V, IDS = 12 A, VGS = 10 V
max.
100
ns
t
d(off)
Zgen. = 1
Ω, L-load
max.
220
ns
C
iss
typ.
8.5
nF
C
oss
V
DS = 25 V, f = 1 MHz, VGS = 0 V
typ.
0.9
nF
C
rss
typ.
0.3
nF
Q
g
V
DS = 250 V, I
D = 12 A, VGS = 10 V typ.
350
nC
R
thJH
max.
0.38
K/W
}
}
Module
Symbol
Test Conditions
Maximum Ratings
T
VJ
-40...+150
°C
T
JM
150
°C
T
stg
-40...+150
°C
V
isol
50/60 Hz
t = 1 min
3000
V
Iisol
≤ 1 mA t = 1 s
3600
V
M
d
Mounting torque (M 4)
1.5-2.0
Nm
Weight
typ.
24
g
NTC optional
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
L
M
X
V
C
K
G H
1
2


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