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2SCR533D Datasheet(PDF) 2 Page - Rohm

Part # 2SCR533D
Description  NPN 3.0A 50V Middle Power Transistor
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SCR533D Datasheet(HTML) 2 Page - Rohm

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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR533P / 2SCR533D
lElectrical characteristics
(Ta = 25°C)
*1 Pulsed
*2 See switching time test circuit
lSwitching time test circuit
Unit
V
m
A
-
V
Max.
-
V
-
Parameter
Symbol
Conditions
Min.
Typ.
Collector-emitter
breakdown voltage
BVCEO
IC = 1mA
50
-
Collector-base
breakdown voltage
BVCBO
IC = 100mA
50
-
Emitter-base
breakdown voltage
BVEBO
IE = 100mA
6
-
1
m
A
Collector cut-off current
ICBO
VCB = 50V
-
-
1
Emitter cut-off current
IEBO
VEB = 4V
-
-
-
V
DC current gain
hFE
VCE = 3V, IC = 50mA
180
-
450
-
Collector-emitter
saturation voltage
VCE(sat) *1 IC = 1A, IB = 50mA
-
0.13
0.35
tf *2
-
80
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A
f = 1MHz
-
13
-
pF
Transition frequency
fT
VCE = 10V, IE = -500mA
f=100MHZ
-
320
-
ns
ns
Storage time
tstg *2
-
450
-
ns
Turn-on time
ton *2
IC=1.5A
IB1=150mA
IB2= -150mA
VCC⋍10V
-
50
-
Fall time
2/7
2013.05 - Rev.B


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