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BS616LV2023 Datasheet(PDF) 8 Page - Brilliance Semiconductor

Part # BS616LV2023
Description  Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616LV2023 Datasheet(HTML) 8 Page - Brilliance Semiconductor

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Revision 2.4
April 2002
8
t WR
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
(3)
t CW
(11)
t BW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
CE1
OE
ADDRESS
(5)
CE2
(5)
BSI
BS616LV2023
(5)
LB,UB
R0201-BS616LV2023
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616LV2023-70
MIN. TYP. MAX.
BS616LV2023-10
MIN. TYP. MAX.
UNIT
t
AVAX
tWC
Write Cycle Time
70
--
--
100
--
--
ns
t
E1LWH
tCW
Chip Select to End of Write
70
--
--
100
--
--
ns
t
AVWL
tAS
Address Setup Time
0
----0
--
--
ns
t
AVWH
tAW
Address Valid to End of Write
70
--
--
100
--
--
ns
t
WLWH
tWP
Write Pulse Width
35
--
--
50
--
--
ns
t
WHAX
tWR
Write recovery Time
(CE2, CE1,WE)
0
----0
--
--
ns
t
BW
tBW
Date Byte Control to End of Write
(LB,U )
3
B
0
--
--
40
--
--
ns
t
WLQZ
tWHZ
Write to Output in High Z
0--
30
0
--
40
ns
t
DVWH
tDW
Data to Write Time Overlap
30
--
--
40
--
--
ns
t
WHDX
tDH
Data Hold from Write Time
0
----0
--
--
ns
t
GHQZ
tOHZ
Output Disable to Output in High Z
0--
30
0
--
40
ns
t
WHOX
tOW
End of Write to Output Active
5--
--
10
--
--
ns
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle .
NOTE :
(1)


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