BS616LV2025DC datasheet(4/11 Pages) BSI

Part #	BS616LV2025DC

Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

4

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP.(1) MAX.

UNITS

V IL

Guaranteed Input Low

Voltage (2)

Vcc=5.0V

-0.5

--

0.8

V

V IH

Guaranteed Input High

Voltage (2)

Vcc=5.0V

2.2

--

Vcc+0.2

V

I IL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

I OL

Output Leakage Current

Vcc = Max, CE1 = VIHor CE2=VILor OE = VIH,

VI/O = 0V to Vcc

--

1

uA

V OL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=5.0V

--

0.4

V

V OH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=5.0V

2.4

--

V

I CC

Operating Power Supply

Current

Vcc = Max, CE1= VIL, CE2=VIH

= 0mA, F =

Vcc=5.0V

IDQ

Fmax (3)

--

40

mA

I CCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=5.0V

--

1

mA

I CCSB1

Standby Current-CMOS

Vcc-0.2V or

CE2 0.2V,

Other inputs

Vcc - 0.2V or

0.2V

Vcc=5.0V

Vcc = Max, CE1

VIN

--

0.6

6

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

BSI

BS616LV2025

R0201-BS616LV2025

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