BS616LV4015BI datasheet(3/10 Pages) BSI

Part #	BS616LV4015BI

Description	Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

3

R0201-BS616LV4015

SYMBOL

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VDR

Vcc for Data Retention

CE

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

1.5

--

V

ICCDR

Data Retention Current

CE

Vcc -0.2V

VIN

Vcc - 0.2V or VIN

0.2V

--

0.1

1.5

uA

tCDR

Chip Deselect to Data

Retention Time

0--

-

n

-s

tR

Operation Recovery Time

See Retention Waveform

TRC (2)

--

ns

CIN

Input

Capacitance

VIN=0V

6

pF

CDQ

Input/Output

Capacitance

VI/O=0V

8

pF

RANGE

AMBIENT

TEMPERATURE

Vcc

Commercial

0 O C to +70 O C4.5V ~ 5.5V

Industrial

-40 O C to +85 O C4.5V ~ 5.5V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

ABSOLUTE MAXIMUM RATINGS(1)

OPERATING RANGE

CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

1. This parameter is guaranteed and not tested.

DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

SYMBOL

PARAMETER

RATING

UNITS

V TERM

Terminal Voltage with

Respect to GND

-0.5 to

Vcc+0.5

V

T BIAS

Temperature Under Bias

-40 to +125

O C

T STG

Storage Temperature

-60 to +150

O C

P T

Power Dissipation

1.0

W

I OUT

DC Output Current

mA

20

BSI

BS616LV4015

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1 ) MAX.

UNITS

VIL

Guaranteed Input Low

Voltage(2)

Vcc=5.0V

-0.5

--

0.8

V

VIH

Guaranteed Input High

Voltage(2)

V

Vcc=5.0V

2.2

--

Vcc+0.2

IIL

Input Leakage Current

= 0V to Vcc

Vcc = Max, VIN

--

1

uA

IOL

Output Leakage Current

Vcc = Max, CE = V

,

VI/O = 0V to Vcc

IH

, or OE = VIH

--

1

uA

VOL

Output Low Voltage

= 2mA

Vcc = Max, IOL

Vcc=5.0V

--

0.4

V

VOH

Output High Voltage

= -1mA

Vcc = Min, IOH

Vcc=5.0V

2.4

--

V

ICC

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax

(3)

Vcc=5.0V

--

45

mA

ICCSB

Standby Current-TTL

IH

, IDQ= 0mA

CE = V

Vcc=5.0V

--

2

mA

ICCSB1

Standby Current-CMOS

CE

V

Vcc-0.2V,

IN

Vcc - 0.2V or VIN 0.2V

Vcc=5.0V

--

1.5

15

uA

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

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