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BS616LV4025DI Datasheet(PDF) 8 Page - Brilliance Semiconductor

Part # BS616LV4025DI
Description  Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616LV4025DI Datasheet(HTML) 8 Page - Brilliance Semiconductor

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Revision 2.4
April 2002
8
AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc=5.0V)
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
BSI
BS616LV4025
R0201-BS616LV4025
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616LV4025-70
MIN.
TYP.
MAX.
UNIT
Data Hold from Write Time
Write Cycle Time
t
AVAX
t
E1LWH
t
AVWL
t
WLWH
t
BW
t
DVWH
t
GHQZ
t
WHQX
t
WHDX
t
WLQZ
t
WHAX
t
AVWH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Output Disable to Output in High Z
End of Write to Output Active
Data Byte Control to End of Write
70
70
0
70
35
0
30
0
30
0
0
5
30
30
ns
ns
(CE2, CE1, WE)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Pulse Width
BS616LV4025-55
MIN.
TYP.
MAX.
55
55
0
55
30
0
25
0
25
0
0
5
25
25
(LB,UB)
t WR
t WC
(3)
t CW
(11)
t BW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
CE1
OE
ADDRESS
(5)
CE2
(5)
(5)
LB,UB
1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle.
(1)
NOTE :


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