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BS616UV2011AC Datasheet(PDF) 3 Page - Brilliance Semiconductor |
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BS616UV2011AC Datasheet(HTML) 3 Page - Brilliance Semiconductor |
3 / 11 page R0201-BS616UV2011 Revision 2.5 April 2002 3 SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE Vcc - 0.2V VIN Vcc - 0.2V or VIN 0.2V 1.5 -- -- V ICCDR Data Retention Current CE Vcc - 0.2V VIN Vcc - 0.2V or VIN 0.2V -- 0.05 0.5 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform TRC (2) -- -- ns SYMBOL PARAMETER CONDITIONS MAX. UNIT CIN Input Capacitance VIN=0V 6 pF CDQ Input/Output Capacitance VI/O=0V 8 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C1.8V ~ 3.6V Industrial -40 O C to +85 O C1.8V ~ 3.6V 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/t RC . DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) 1. Vcc = 1.5V, TA = + 25OC 2. t RC = Read Cycle Time ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not tested. DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL PARAMETER RATING UNITS VTERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V TBIAS Temperature Under Bias -40 to +125 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA BSI BS616UV2011 PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS Vcc=2.0V 0.6 VIL Guaranteed Input Low (2) Voltage 0.8 Vcc=3.0V -0.5 -- V Vcc=2.0V 1.4 VIH Guaranteed Input High (2) Voltage Vcc=3.0V 2.0 -- Vcc+0.2 V IIL Input Leakage Current = 0V to Vcc Vcc = Max, VIN -- -- 1 uA IOL Output Leakage Current Vcc = Max, CE = V V= 0V to Vcc IH , or OE = VIH, I/O -- -- 1 uA Vcc=2.0V VOL Output Low Voltage = 1mA Vcc = Max, IOL Vcc=3.0V -- -- 0.4 V Vcc=2.0V 1.6 VOH Output High Voltage = -0.5mA Vcc = Min, IOH Vcc=3.0V 2.4 -- -- V Vcc=2.0V -- -- 15 ICC Operating Power Supply Current CE = VIL, IDQ = 0mA, F = Vcc=3.0V Fmax(3) -- -- 20 mA Vcc=2.0V -- -- 0.1 ICCSB Standby Current TTL IH , IDQ = 0mA CE = V Vcc=3.0V -- -- 0.5 mA Vcc=2.0V -- 0.08 0.5 ICCSB1 Standby Current CMOS CE Vcc-0.2V, VIN Vcc - 0.2V or VIN 0.2V Vcc=3.0V -- 0.1 0.7 uA |
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