Revision 2.4

April 2002

1

Ultra Low Power/Voltage CMOS SRAM

128K x 16 or 256K x 8 bit switchable

The BS616UV2021 is a high performance, Ultra low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits or

262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.08uA and maximum access time of 70/100ns in 2.0V operation.

Easy

memory

expansion is

provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

The BS616UV2021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616UV2021 is available in DICE form and 48-pin BGA type.

POWER DISSIPATION

SPEED

( ns )

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

Vcc=

2.0V

Vcc=

2.0V

Vcc=

3.0V

Vcc=

2.0V

Vcc=

3.0V

PKG TYPE

BS616UV2021DC

DICE

BS616UV2021AC

20mA

BGA-48-0608

V ~ 3.6V

70 / 100

0.5uA

0.7uA

15mA

BS616UV2021DI

DICE

BS616UV2021AI

25mA

BGA-48-0608

V ~ 3.6V

70 / 100

1uA

1.5uA

20mA

• Ultra low operation voltage : 1.8 ~ 3.6V

• Ultra low power consumption :

Vcc = 2.0V

C-grade: 15mA (Max.) operating current

I-grade: 20mA (Max.) operating current

0.08uA (Typ.) CMOS standby current

Vcc = 3.0V

C-grade: 20mA (Max.) operating current

I-grade: 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 2.0V

-10

100ns (Max.) at Vcc = 2.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

DESCRIPTION

FEATURES

BLOCK DIAGRAM

PRODUCT FAMILY

BS616UV2021

Row

Decoder

Memory Array

1024 x 2048

Column I/O

Write Driver

Sense Amp

Column Decoder

Data

Buffer

Output

A1 A2 A3

Data

Input

Buffer

Control

Vss

Vdd

OE

WE

D0

A8

A12

16(8)

16(8)

16(8)

16(8)

CE1

D15

A11

A7

A13

14(16)

128(256)

2048

1024

20

A10

A9

A0

A6

A4

A16

A14

Address

Input

Buffer

A5

Address Input Buffer

.

.

.

.

UB

.

.

.

.

LB

A15

CIO

CE2

(SAE)

PIN CONFIGURATION

R0201-BS616UV2021

BSI