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BS616UV8010BC Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616UV8010BC
Description  Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616UV8010BC Datasheet(HTML) 5 Page - Brilliance Semiconductor

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Revision 2.4
April 2002
5
R0201-BS616UV8010
BSI
BS616UV8010
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL
.
5. Transition is measured
500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
±
READ CYCLE2 (1,3,4)
t CLZ
t CHZ(5)
D
OUT
CE1
(5)
t ACS1
CE2
t ACS2
READ CYCLE3 (1,4)
t OH
t RC
t OE
D
OUT
LB,UB
CE1
OE
ADDRESS
t CLZ
(5)
t ACS1
t CHZ
(1,5)
t OHZ (5)
t OLZ
t AA
t BDO
t BA
t BE
CE2
t ACS2


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