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BS616UV8020 Datasheet(PDF) 8 Page - Brilliance Semiconductor

Part # BS616UV8020
Description  Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616UV8020 Datasheet(HTML) 8 Page - Brilliance Semiconductor

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Revision 2.4
April 2002
8
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to +70oC, Vcc=2V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616UV8020-70
MIN.
TYP.
MAX.
UNIT
Data Hold from Write Time
Write Cycle Time
t
AVAX
t
E1LWH
t
AVWL
t
WLWH
t
BW
t
DVWH
t
GHQZ
t
WHQX
t
WHDX
t
WLQZ
t
WHAX
t
AVWH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Output Disable to Output in High Z
End of Write to Output Active
Data Byte Control to End of Write
30
30
ns
ns
(CE2, CE1, WE)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
Write Pulse Width
BS616UV8020-10
MIN.
TYP.
MAX.
40
40
BSI
BS616UV8020
(LB,UB)
R0201-BS616UV8020
70
70
0
70
35
0
30
0
30
0
0
5
100
100
0
100
50
0
40
0
40
0
0
10
t WR
t WC
(3)
t CW
(11)
t BW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
CE1
OE
ADDRESS
(5)
CE2
(5)
(5)
LB,UB
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle.
(1)
NOTE :


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