Revision 2.2

April 2001

1

BSI

A6

Ultra Low Power/Voltage CMOS SRAM

32K X 8 bit

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

Vcc=

2.0V

Vcc=

3.0V

Vcc=

2.0V

Vcc=

3.0V

Vcc=

2.0V

PKG

TYPE

BS62UV256SC

SOP-28

BS62UV256TC

TSOP-28

BS62UV256PC

PDIP-28

BS62UV256JC

SOJ-28

BS62UV256DC

+0

1.8V ~ 3.6V

150

0.2uA

0.1uA

20mA

10mA

DICE

BS62UV256SI

SOP-28

BS62UV256TI

TSOP-28

BS62UV256PI

PDIP-28

BS62UV256JI

SOJ-28

BS62UV256DI

-40

1.8V ~ 3.6V

150

0.4uA

0.3uA

25mA

15mA

DICE

• Ultra low operation voltage : 1.8V ~ 3.6V

• Ultra low power consumption :

Vcc = 2.0V

C-grade : 10mA (Max.) operating current

I- grade : 15mA (Max.) operating current

0.005uA (Typ.) CMOS standby current

Vcc = 3.0V

C-grade : 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.01uA (Typ.) CMOS standby current

• High speed access time :

-15

150ns (Max.) at Vcc = 2.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

The BS62UV256 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 32,768 words by 8 bit

and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both h

speed and low power features with a typical CMOS standby current

0.005uA and maximum access time of 150ns in 2V operation.

Easy memory expansion is provided by an active LOW

enable (CE), and active LOW output enable (OE) and three-st

output drivers.

The BS62UV256 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62UV256

is available in the JEDEC standard 28

330mil Plastic SOP, 8mmx13.4mm TSOP (normal type), 300mi

SOJ and 600mil Plastic DIP.

s

igh

of

chip

ate

pin

l Plastic

DESCRIPTION

FEATURES

BLOCK DIAGRAM

PRODUCT FAMILY

PIN CONFIGURATIONS

Address

Input

Buffer

Row

Decoder

Memory Array

512 x 512

Column I/O

Sense Amp

Write Driver

Column Decoder

Data

Buffer

Output

Address Input Buffer

A3 A2 A1 A0 A10

Data

Buffer

Input

Control

Gnd

Vdd

OE

WE

CE

DQ5

DQ4

A12

A8

A7

8

8

8

8

DQ7

DQ6

DQ3

DQ2

DQ1

DQ0

A11

A9

A5

12

64

512

512

18

A14

A13

A4

28

27

26

25

24

23

22

21

20

19

18

17

16

15

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

A0

A1

A2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

OE

A11

A9

A8

A13

WE

VCC

A14

A12

A7

A6

A5

A4

A3

BS62UV256

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

VC

WE

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

C

R0201-BS62UV256

BS62UV256TC

BS62UV256TI

BS62UV256SC

BS62UV256SI

BS62UV256PC

BS62UV256PI