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SDB30100PI-1 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SDB30100PI-1 Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 5 page KSD-D0O026-003 2 Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 100 V Maximum average forward rectified current per diode IF(AV) 15 A total device 30 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 210 A Storage temperature range Tstg -45℃ to +150℃ ℃ Maximum operating junction temperature Tj 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 4.5 ℃ /W total device 4.2 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM (1) IFM = 15A Tj=25℃ - - 0.85 V Tj=125℃ - - 0.70 V Reverse leakage current IRM (1) VR = VRRM Tj=25℃ - - 0.2 mA Tj=125℃ - - 30 mA Junction capacitance Cj VR = 5VDC, f=1MHz - 280 - pF Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% SDB30100PI |
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