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BSH203 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. BSH203
Description  P-channel enhancement mode MOS transistor
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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BSH203 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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Philips Semiconductors
Product specification
P-channel enhancement mode
BSH203
MOS transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Very low threshold voltage
V
DS = -30 V
• Fast switching
• Logic level compatible
I
D = -0.47 A
• Subminiature surface mount
package
R
DS(ON) ≤ 1.1 Ω (VGS = -2.5 V)
V
GS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
PINNING
SOT23
P-channel, enhancement mode,
PIN
DESCRIPTION
logic
level,
field-effect
power
transistor. This device has low
1
gate
threshold voltage and extremely
fast switching making it ideal for
2
source
battery powered applications and
high speed digital interfacing.
3
drain
The BSH203 is supplied in the
SOT23
subminiature
surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-30
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
-30
V
V
GS
Gate-source voltage
-
± 8V
I
D
Drain current (DC)
T
a = 25 ˚C
-
-0.47
A
T
a = 100 ˚C
-
-0.3
A
I
DM
Drain current (pulse peak value)
T
a = 25 ˚C
-
-1.9
A
P
tot
Total power dissipation
T
a = 25 ˚C
-
0.417
W
T
a = 100 ˚C
-
0.17
W
T
stg, Tj
Storage & operating temperature
- 55
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction to
FR4 board, minimum
300
-
K/W
ambient
footprint
d
g
s
1
2
3
Top view
August 1998
1
Rev 1.000


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