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KSD2058 Datasheet(PDF) 2 Page - Savantic, Inc. |
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KSD2058 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors KSD2058 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 3.0 V ICBO Collector cut-off current VCB=60V; IE=0 10 µA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.5A ; VCE=5V 60 300 fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz COB Collector output capacitance f=1MHz;VCB=10V 35 pF Switching times ton Turn-on time 0.65 µs ts Storage time 1.3 µs tf Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15@ 0.65 µs hFE Classifications O Y G 60-120 100-200 150-300 |
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