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HRS75N75V Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HRS75N75V Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 7 page Package Marking and Odering Information Device Marking Week Marking Package Packing Quantity RoHS Status HRS75N75V YWWX TO-220F Tube 50 Pb Free HRS75N75V YWWXg TO-220F Tube 50 Halogen Free Electrical Characteristics T C=25 C unless otherwise specified I S Continuous Source-Drain Diode Forward Current -- -- 48 A I SM Pulsed Source-Drain Diode Forward Current -- -- 192 V SD Source-Drain Diode Forward Voltage I S = 48 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time I S = 48 A, VGS = 0 V di F/dt = 100 A/ (Note 3) -- 80 -- Qrr Reverse Recovery Charge -- 180 -- nC Symbol Parameter Test Conditions Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = 250 2.0 -- 4.0 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 24 A -- 6.0 7.5 m On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 70 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 70 V, VGS = 0 V -- -- 1 V DS = 56 V, TC = 150 -- -- 10 I GSS Gate-Body Leakage Current V GS = 20 V, V DS = 0 V -- -- 100 Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4000 5200 C oss Output Capacitance -- 350 455 C rss Reverse Transfer Capacitance -- 250 325 Dynamic Characteristics t d(on) Turn-On Time V DS = 35 V, ID = 40 A, R G = 25 (Note 4,5) -- 75 160 t r Turn-On Rise Time -- 150 310 t d(off) Turn-Off Delay Time -- 150 310 t f Turn-Off Fall Time -- 60 130 Q g Total Gate Charge V DS = 56 V, ID = 40 A, V GS = 10 V (Note 3,4) -- 80 105 nC Q gs Gate-Source Charge -- 20 -- nC Q gd Gate-Drain Charge -- 30 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=450uH, I AS=48A, VDD=25V, RG=25 , Starting T J =25 C 3. I SD ,di/dt , V DD DSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature |
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