BV

R

I

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HRD13N10K / HRU13N10K

100V N-Channel Trench MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

100

V

I

D

Drain Current

– Continuous (T

)

3.5

A

Drain Current

– Continuous (T

)

2.8

A

I

DM

Drain Current

– Pulsed

(Note 1)

14.0

A

V

GS

Gate-Source Voltage

20

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

40

mJ

I

AR

Avalanche Current

(Note 1)

3.5

A

P

D

Power Dissipation (T

)*

2.5

W

Power Dissipation (T

)

- Derate above 25

37

W

0.3

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

1.Gate 2. Drain 3. Source

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

3.4

/W

R

JA

Junction-to-Ambient*

--

50

R

JA

Junction-to-Ambient

--

110

Dec 2013

2

1

2

3

1

3

D-PAK

I-PAK

HRD13N10K

HRU13N10K

* When mounted on the minimum pad size recommended (PCB Mount)

Originative New Design

Superior Avalanche Rugged Technology

Excellent Switching Characteristics

Unrivalled Gate Charge : 20 nC (Typ.)

Extended Safe Operating Area

Lower R

(Typ.) @V

Lower R

(Typ.) @V

Built-in ESD Diode

100% Avalanche Tested