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HTS4A60H Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTS4A60H Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 6 page ◎ SEMIHOW REV.A1,March 2013 HTS4A60H/HTS4A80H 3 Quadrants Standard TRIAC Absolute Maximum Ratings (T J=25℃ unless otherwise specified ) V DRM = 600V/800V I T(RMS) = 4 A I TSM = 42 A I GT = 25mA T2 T1 G TO-220F Symbol FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (I T(RMS) = 4A) Gate Trigger Current : 25mA High commutation capability. Applications General purpose of AC switching, heating control, motor control, Humidifier, etc General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Symbol Parameter Conditions Ratings Unit HTS4A60H HTS4A80H V DRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 800 V V RRM Repetitive Peak Reverse Voltage 600 800 V I T(AV) Average On-State Current Full sine wave, T C = 102 oC 3.6 A I T(RMS) R.M.S. On-State Current 4 A I TSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 40/42 A I2t Fusing Current t = 10ms 8.8 A2S P GM Forward Peak Gate Power Dissipation T J = 125 °C 5 W P G(AV) Forward Average Gate Power Dissipation T J = 125 °C, over any 20ms 0.5 W I FGM Forward Peak Gate Current T J = 125 °C, pulse width ≤ 20us 2 A V RGM Reverse Peak Gate Voltage T J = 125 °C, pulse width ≤ 20us 5 V T J Operating Junction Temperature -40~+150 oC T STG Storage Temperature -40~+150 oC |
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