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IRF7507PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7507PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7507PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions N-Ch 20 — — VGS = 0V, ID = 250µA P-Ch -20 — — VGS = 0V, ID = -250µA N-Ch — 0.041 — Reference to 25°C, ID = 1mA P-Ch — -0.012 — Reference to 25°C, ID = -1mA — 0.085 0.14 VGS = 4.5V, ID = 1.7A — 0.120 0.20 VGS = 2.7V, ID = 0.85A — 0.17 0.27 VGS = -4.5V, ID =-1.2A — 0.28 0.40 VGS = -2.7V, ID =-0.6A N-Ch 0.7 — — VDS = VGS, ID = 250µA P-Ch -0.7 — — VDS = VGS, ID = -250µA N-Ch 2.6 — — VDS = 10V, ID = 0.85A P-Ch 1.3 — — VDS = -10V, ID = -0.6A N-Ch — — 1.0 VDS = 16 V, VGS = 0V P-Ch — — -1.0 VDS = -16V, VGS = 0V N-Ch — — 25 VDS = 16 V, VGS = 0V, TJ = 125°C P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V N-Ch –– 5.3 8.0 P-Ch — 5.4 8.2 N-Ch –– 0.84 1.3 P-Ch — 0.96 1.4 N-Ch –– 2.2 3.3 P-Ch — 2.4 3.6 N-Ch — 5.7 — P-Ch — 9.1 — N-Ch — 24 — P-Ch — 35 — N-Ch — 15 — P-Ch — 38 — N-Ch — 16 — P-Ch — 43 — N-Ch — 260 — P-Ch — 240 — N-Ch — 130 — pF P-Ch — 130 — N-Ch — 61 — P-Ch — 64 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 21 ) Notes: N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Parameter Min. Typ. Max. Units Conditions N-Ch — — 1.25 P-Ch — — -1.25 N-Ch — — 19 P-Ch — — -14 N-Ch — — 1.2 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch — — -1.2 TJ = 25°C, IS = -1.2A, VGS = 0V N-Ch — 39 59 P-Ch — 52 78 N-Ch — 37 56 P-Ch — 63 95 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics V V/°C Ω V S µA nC ns N-Channel ID = 1.7A, VDS = 16V, VGS = 4.5V P-Channel ID = -1.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.7A, RG = 6.0Ω, RD = 5.7Ω P-Channel VDD = -10V, ID = -1.2A, RG = 6.0Ω, RD = 8.3Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.2A, di/dt = -100A/µs Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. |
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