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IRG7PH28UD1MPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG7PH28UD1MPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH28UD1MPBF Datasheet(HTML) 5 Page - International Rectifier

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IRG7PH28UD1PbF/IRG7PH28UD1MPbF
5
www.irf.com
© 2012 International Rectifier
January 8, 2013
0
5
10
15
20
25
30
IC (A)
10
100
1000
tdOFF
tF
0
20
40
60
80
100
RG ()
10
100
1000
tdOFF
tF
Fig. 14
- Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
0
5
10
15
20
25
30
IC (A)
0
400
800
1200
1600
2000
EOFF
0
2040
6080
100
Rg ()
800
1000
1200
1400
1600
1800
EOFF
Fig. 15
- Typ. Energy Loss vs. RG
TJ =
Fig. 13
- Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
Fig. 16
- Typ. Switching Time vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 15A; VGE = 15V
0
100
200
300
400
500
600
VCE(V)
1
10
100
1000
10000
Cies
Coes
Cres
Fig. 17
- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0
102030
40
506070
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES= 600V
VCES= 400V
Fig. 18
- Typical Gate Charge vs. VGE
ICE = 15A


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