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IRG7PH35UPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG7PH35UPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page IRG7PH35UPbF IRG7PH35U-EP 1 www.irf.com 3/26/10 GC E Gate Collector Emitter TO-247AC IRG7PH35UPbF TO-247AD IRG7PH35U-EP G C E C G C E C VCES = 1200V I NOMINAL = 20A TJ(max) = 175°C VCE(on) typ. = 1.9V PD - 97479 E C G n-channel INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S • Welding • Solar inverter • Induction heating Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 55 IC @ TC = 100°C Continuous Collector Current 35 INOMINAL Nominal Current 20 ICM Pulse Collector Current, VGE=15V 60 ILM Clamped Inductive Load Current, VGE=20V c 80 VGE Continuous Gate-to-Emitter Voltage ±30 V PD @ TC = 25°C Maximum Power Dissipation 210 PD @ TC = 100°C Maximum Power Dissipation 105 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.70 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– °C/W A W °C |
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