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IRG7PH37K10DPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG7PH37K10DPBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH37K10DPBF Datasheet(HTML) 5 Page - International Rectifier

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IRG7PH37K10DPbF/IRG7PH37K10D-EPbF
5
www.irf.com
© 2013 International Rectifier
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November 4, 2013
0
5
10
15
20
25
30
IC (A)
10
100
1000
tR
tdOFF
tF
tdON
4
6
8
10
12
14
16
VGE (V)
0
10
20
30
40
50
60
TJ = 25°C
TJ = 150°C
Fig. 13
- Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
0
20
40
60
80
100
RG ()
10
100
1000
tR
tdOFF
tF
tdON
Fig. 15
- Typ. Switching Time vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
Fig. 16
- Typ. Energy Loss vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V
0
2040
6080
100
Rg ()
1.0
1.4
1.8
2.2
2.6
EOFF
EON
010
20
30
IC (A)
0.0
1.0
2.0
3.0
4.0
EOFF
EON
Fig. 14
- Typ. Energy Loss vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
Fig. 17
- Typ. Switching Time vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V
510
15
20
VGE (V)
0
2
4
6
8
10
12
ICE= 7.5A
ICE= 15A
ICE= 30A
Fig. 12
- Typical VCE vs. VGE
TJ = 150°C


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