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IRG7PH44K10DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PH44K10DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRG7PH44K10DPbF/IRG7PH44K10D-EPbF 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.80 — V/°C VGE = 0V, IC = 2mA (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.4 V IC = 25A, VGE = 15V, TJ = 25°C — 2.4 — IC = 25A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 5.0 — 7.5 V VCE = VGE, IC = 1.2mA VGE(th)/TJ Threshold Voltage Temperature Coeff. — -15 — mV/°C VCE = VGE, IC = 1.2mA (25°C-150°C) gfe Forward Transconductance — 16 — S VCE = 50V, IC = 25A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.0 35 µA VGE = 0V, VCE = 1200V — 1200 — VGE = 0V, VCE = 1200V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V VF — 2.5 3.3 V IF = 8.0A — 2.4 — IF = 8.0A, TJ = 150°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max Units Conditions Qg Total Gate Charge (turn-on) — 135 200 nC IC = 25A Qge Gate-to-Emitter Charge (turn-on) — 30 45 VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 65 100 VCC = 600V Eon Turn-On Switching Loss — 2.1 3.0 mJ IC = 25A, VCC = 600V, VGE=15V RG = 10, TJ = 25°C Energy losses include tail & diode reverse recovery Eoff Turn-Off Switching Loss — 1.3 2.2 Etotal Total Switching Loss — 3.4 5.2 td(on) Turn-On delay time — 75 95 ns tr Rise time — 50 70 td(off) Turn-Off delay time — 315 340 tf Fall time — 95 115 Eon Turn-On Switching Loss — 2.8 — mJ I C = 25A, VCC = 600V, VGE=15V RG = 10, TJ = 150°C Energy losses include tail & diode reverse recovery Eoff Turn-Off Switching Loss — 2.2 — Etotal Total Switching Loss — 5.0 — td(on) Turn-On delay time — 60 — ns tr Rise time — 55 — td(off) Turn-Off delay time — 340 — tf Fall time — 250 — Cies Input Capacitance — 3050 — VGE = 0V Coes Output Capacitance — 145 — pF VCC = 30V Cres Reverse Transfer Capacitance — 80 — f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area TJ = 150°C, IC = 100A FULL SQUARE VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C,VCC = 600V, Vp ≤ 1200V VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 190 — µJ TJ = 150°C trr Diode Reverse Recovery Time — 130 — ns VCC = 600V, IF = 8A Irr Peak Reverse Recovery Current — 13 — A VGE = 15V, Rg = 10 Diode Forward Voltage Drop Notes: VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement . |
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