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X3N190-91 Datasheet(PDF) 1 Page - Calogic, LLC |
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X3N190-91 Datasheet(HTML) 1 Page - Calogic, LLC |
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1 / 2 page  Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES •• Very High Input Impedance •• High Gate Breakdown 3N190-3N191 •• Low Capacitance ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55 oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25 oC. . . . . . . . . . . . . . . . . . 4.2mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 3N190-91 Hermetic TO-99 -55 oC to +150oC X3N190-91 Sorted Chips in Carriers -55 oC to +150oC CORPORATION PIN CONFIGURATION S2 G1 D2 D1 G2 S1 C TO-99 2506 ELECTRICAL CHARACTERISTICS (TA = 25 oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER 3N190/91 UNITS TEST CONDITIONS MIN MAX IGSSR Gate Reverse Current 10 pA VGS = 40V IGSSF Gate Forward Current -10 VGS = -40V -25 TA = +125 oC BVDSS Drain-Source Breakdown Voltage -40 V ID = -10 µA BVSDS Source-Drain Breakdown Voltage -40 IS = -10 µA, VBD = 0 VGS(th) Threshold Voltage -2.0 -5.0 VDS = -15V, ID = -10 µA -2.0 -5.0 VDS = VGS, ID = -10 µA VGS Gate Source Voltage -3.0 -6.5 VDS = -15V, ID = -500 µA IDSS Zero Gate Voltage Drain Current -200 VDS = -15V ISDS Source Drain Current -400 VSD = -15V, VDB = 0 rDS(on) Drain-Source on Resistance 300 ohms VDS = -20V, ID = -100 µA ID(on) On Drain Current -5.0 -30.0 mA VDS = -15V, VGS = -10V |
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