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FQPF11N40CT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQPF11N40CT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 10 page  November 2013 ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 www.fairchildsemi.com 1 MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQP11N40C FQPF11N40C Unit VDSS Drain to Source Voltage 400 V ID Drain Current -Continuous (TC = 25oC) 10.5 10.5 * A -Continuous (TC = 100oC) 6.6 6.6 * A IDM Drain Current - Pulsed (Note 1) 42 42 * A VGSS Gate to Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 135 44 W - Derate above 25oC 1.07 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FQP11N40C FQPF11N40C Unit RθJC Thermal Resistance, Junction to Case, Max 0.93 2.86 °C/W RθJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W *Drain current limited by maximum junction temperature FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 m Ω Features • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-220 GD S TO-220F G DS G S D |
Similar Part No. - FQPF11N40CT |
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Similar Description - FQPF11N40CT |
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