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FQP11N40C Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQP11N40C Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Device Marking Device Package Reel Size Tape Width Quantity FQP11N40C FQP11N40C TO-220 Tube N/A 50 units FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 400 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coeffi- cient ID = 250 μA, Referenced to 25°C -- 0.54 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 μA VDS = 320 V, TC = 125°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A -- 0.43 0.53 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.25 A -- 7.1 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 840 1090 pF Coss Output Capacitance -- 250 325 pF Crss Reverse Transfer Capacitance -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 200 V, ID = 10.5 A, RG = 25 Ω (Note 4) -- 14 40 ns tr Turn-On Rise Time -- 89 190 ns td(off) Turn-Off Delay Time -- 81 170 ns tf Turn-Off Fall Time -- 81 170 ns Qg Total Gate Charge VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4) -- 28 35 nC Qgs Gate-Source Charge -- 4 -- nC Qgd Gate-Drain Charge -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/μs -- 290 -- ns Qrr Reverse Recovery Charge -- 2.4 -- μC |
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