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IRF6893MTRPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF6893MTRPBF
Description  DirectFET짰 MOSFET with Schottky Diode
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6893MTRPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF6893MTRPbF
2
www.irf.com
‡ Pulse width  400μs; duty cycle  2%.
Notes:
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
VDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.2
1.6
m
–––
1.6
2.1
VGS(th)
Gate Threshold Voltage
1.1
1.6
2.1
V
VDS = VGS, ID = 100μA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-3.9
–––
mV/°C VDS = VGS, ID = 10mA
IDSS
Drain-to-Source Leakage Current
–––
–––
250
μA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
110
–––
–––
S
Qg
Total Gate Charge
–––
25
38
Qgs1
Pre-Vth Gate-to-Source Charge
–––
5.9
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.5
–––
nC
Qgd
Gate-to-Drain Charge
–––
8.5
–––
Qgodr
Gate Charge Overdrive
–––
8.1
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
11
–––
Qoss
Output Charge
–––
29
–––
nC
RG
Gate Resistance
–––
0.47
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
83
–––
ns
td(off)
Turn-Off Delay Time
–––
19
–––
tf
Fall Time
–––
33
–––
Ciss
Input Capacitance
–––
3480
–––
Coss
Output Capacitance
–––
1140
–––
pF
Crss
Reverse Transfer Capacitance
–––
210
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
Ãg
VSD
Diode Forward Voltage
–––
–––
0.75
V
trr
Reverse Recovery Time
–––
22
33
ns
Qrr
Reverse Recovery Charge
–––
36
54
nC
Conditions
VGS = 0V, ID = 1.0mA
ID = 10mA ( 25°C-125°C)
VGS = 10V, ID = 29A i
VDS =13V, ID = 23A
VDS = 16V, VGS = 0V
MOSFET symbol
RG= 1.8
VDS = 13V
VGS = 4.5V, ID = 23A i
VGS = 16V
VGS = -16V
VDS = 20V, VGS = 0V
Conditions
ƒ = 1.0MHz
VGS = 4.5V
ID = 23A
VGS = 0V
VDS = 13V
ID = 23A
VDD = 13V, VGS = 4.5V i
di/dt = 400A/μs
i
TJ = 25°C, IS = 23A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IF =23A
–––
–––
126
–––
–––
230


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