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MIMMG400K120U6UN Datasheet(PDF) 4 Page - Micross Components |
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MIMMG400K120U6UN Datasheet(HTML) 4 Page - Micross Components |
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4 / 5 page  MIMMG400K120U6UN 30 20 10 0 200 IF (A) Figure9. Switching Energy vs. Forward Current 800 600 400 0 Rectangular Pulse Duration (seconds) Figure10. Transient Thermal Impedance of Diode 40 50 Rectangular Pulse Duration (seconds) Figure11. Transient Thermal Impedance of IGBT 0.001 0.01 0.1 1 10 0.001 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 1 0.1 RG=2.5Ω VCE=600V TVj =125°C RG（Ω） Figure8. Switching Energy vs. Gate Resistor VF（V） Figure7. Diode Forward Characteristics 1 0 3 2 0 0 200 800 400 TVj =125°C TVj =25°C 24 16 8 0 40 4 IF=400 A VCE=600V TVj =125°C 600 32 2.5 5 7.5 12.5 10 |
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