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MIMMG200DR060DE Datasheet(PDF) 2 Page - Micross Components |
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MIMMG200DR060DE Datasheet(HTML) 2 Page - Micross Components |
2 / 5 page MIMMG200DR060DE ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=500μA 3.5 5.5 V VCE(sat) Collector - Emitter Saturation Voltage IC=200A, VGE=15V, TJ=25°C 1.9 V IC=200A, VGE=15V, TJ=125°C 2.1 V ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=25°C 1 mA VCE=600V, VGE=0V, TJ=125°C 6 mA IGES Gate Leakage Current VCE=0V, VGE=±20V -2 2 μA Qge Gate Charge VCC=300V, IC=200A , VGE=±15V 460 nC Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 10.6 nF Coes Output Capacitance 1.04 nF Cres Reverse Transfer Capacitance 0.68 nF td(on) Turn - on Delay Time VCC=300V, IC=200A RG =5Ω,VGE=±15V TJ=25°C Inductive Load 45 ns tr s n 5 4 e m i T e s i R td(off) s n 0 2 3 e m i T y a l e D ff o - n r u T tf s n 5 3 e m i T ll a F td(on) Turn - on Delay Time VCC=300V, IC=200A RG =5Ω,VGE=±15V TJ=125°C Inductive Load 50 ns tr s n 5 4 e m i T e s i R td(off) s n 0 5 3 e m i T y a l e D ff o - n r u T tf s n 0 4 e m i T ll a F Eon Turn - on Switching Energy VCC=300V, IC=200A TJ=25°C RG =5Ω TJ=125°C VGE=±15V TJ=25°C Inductive Load TJ=125°C 7 mJ 9 mJ Eoff Turn - off Switching Energy 5 mJ 7 mJ Free-Wheeling Diode VF Forward Voltage IF=200A , VGE=0V, TJ=25°C 1.9 2.2 V IF=200A , VGE=0V, TJ=125°C 1.7 2.0 V trr Reverse Recovery Time IF=200A , VR=400V diF/dt=-1000A/μs TJ=125°C 70 ns IRRM A 5 5 t n e rr u C y r e v o c e R e s r e v e R . x a M Qrr C µ 3 e g r a h C y r e v o c e R e s r e v e R Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.1 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.25 K /W Torque Module-to-Sink Recommended(M6) 3 5 N· m Torque Module Electrodes Recommended(M5) 2.5 5 N· m Weight 285 g |
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