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MIMMG100SR060B Datasheet(PDF) 2 Page - Micross Components |
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MIMMG100SR060B Datasheet(HTML) 2 Page - Micross Components |
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2 / 5 page  MIMMG100SR060B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=250μA 3.5 5.5 V IC=100A, VGE=15V, TJ=25°C 1.9 V VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=125°C 2.1 V VCE=600V, VGE=0V, TJ=25°C 0.5 mA ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=125°C 3 mA IGES Gate Leakage Current VCE=0V, VGE=±20V -1.1 1.1 μA Qge Gate Charge VCC=300V, IC=100A , VGE=±15V 230 nC Cies Input Capacitance 5.3 nF Coes Output Capacitance 0.52 nF Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz 0.34 nF td(on) Turn - on Delay Time 45 ns tr Rise Time 45 ns td(off) Turn - off Delay Time 320 ns tf Fall Time VCC=300V, IC=100A RG =10Ω,VGE=±15V TJ=25°C Inductive Load 35 ns td(on) Turn - on Delay Time 50 ns tr Rise Time 45 ns td(off) Turn - off Delay Time 350 ns tf Fall Time VCC=300V, IC=100A RG =10Ω,VGE=±15V TJ=125°C Inductive Load 40 ns 3.5 mJ Eon Turn - on Switching Energy 4.5 mJ 2.5 mJ Eoff Turn - off Switching Energy VCC=300V, IC=100A TJ=25°C RG =10Ω TJ=125°C VGE=±15V TJ=25°C Inductive Load TJ=125°C 3.5 mJ Free-Wheeling Diode IF=100A , VGE=0V, TJ=25°C 1.9 2.2 V VF Forward Voltage IF=100A , VGE=0V, TJ=125°C 1.7 2.0 V trr Reverse Recovery Time 50 ns IRRM Max. Reverse Recovery Current 45 A Qrr Reverse Recovery Charge IF=100A , VR=400V diF/dt=-1000A/μs TJ=125°C 1.5 µC THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.2 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.5 K /W Torque Module-to-Sink Recommended（M6） 3 5 N· m Torque Module Electrodes Recommended（M5） 2.5 5 N· m Weight 150 g |
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