MIMMG75J120UZ datasheet(2/4 Pages) MICROSS

Part #	MIMMG75J120UZ

Description	1200V 75A IGBT Module RoHS Compliant

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Manufacturer	MICROSS [Micross Components]

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MIMMG75J120UZ

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate - Emitter Threshold Voltage VCE=VGE, IC=3mA

5

6.2

7

V

IC=75A, VGE=15V, TJ=25°C

1.8

V

VCE(sat)

Collector - Emitter

Saturation Voltage

IC=75A, VGE=15V, TJ=125°C

2.0

V

VCE=1200V, VGE=0V, TJ=25°C

0.2

0.5

mA

ICES

Collector Leakage Current

VCE=1200V, VGE=0V, TJ=125°C

2

mA

IGES

Gate Leakage Current

VCE=0V, VGE=±20V

-100

100

nA

Qge

Gate Charge

VCC=600V, IC=75A, VGE=±15V

780

nC

Cies

F

n

2

5

.

5

e

c

n

a

ti

c

a

p

a

C

t

u

p

n

I

Coes

Output Capacitance

0.4

nF

Cres

Reverse Transfer Capacitance

VCE=25V, VGE=0V, f =1MHz

0.26

nF

td(on)

s

n

0

5

1

e

m

i

T

y

a

l

e

D

n

o

-

n

r

u

T

tr

s

n

5

6

e

m

i

T

e

s

i

R

td(off)

s

n

0

4

e

m

i

T

y

a

l

e

D

ff

o

-

n

r

u

T

tf

Fall Time

VCC=600V, IC=75A

RG =15Ω,VGE=±15V

TJ=25°C

Inductive Load

55

ns

td(on)

s

n

0

6

1

e

m

i

T

y

a

l

e

D

n

o

-

n

r

u

T

tr

s

n

5

6

e

m

i

T

e

s

i

R

td(off)

s

n

0

5

e

m

i

T

y

a

l

e

D

ff

o

-

n

r

u

T

tf

Fall Time

VCC=600V, IC=75A

RG =15Ω,VGE=±15V

TJ=125°C

Inductive Load

70

ns

7.45

mJ

Eon

Turn - on Switching Energy

10.3

mJ

4.9

mJ

Eoff

Turn - off Switching Energy

VCC=600V, IC=75A

TJ=25°C

RG =15Ω

TJ=125°C

VGE=±15V

TJ=25°C

Inductive Load

TJ=125°C

7.8

mJ

VCE(sat)（V）

Figure1. Typical Output characteristics

TJ =125°C

TJ =25°C

150

125

100

75

50

25

0

0.5

1

1.5

2

2.5

3

3.5

VGE（V）

Figure2. Typical Transfer characteristics

14

12

10

8

6

4

2

0

25

50

75

100

125

150

VCE=20V

TJ =125°C

TJ =25°C

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