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MIMMG50H120X6TN Datasheet(PDF) 4 Page - Micross Components |
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MIMMG50H120X6TN Datasheet(HTML) 4 Page - Micross Components |
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4 / 6 page  MIMMG50H120X6TN 8 12 0 20 40 60 100 120 VGE（V） Figure3. Typical Transfer characteristics IGBT-inverter 0 4 6 2 00 10 20 30 40 Eon Eoff RG（Ω） Figure4. Switching Energy vs. Gate Resistor IGBT-inverter VCE=600V IC=50A VGE=±15V TVj =125°C 0 20 IC（A） Figure5. Switching Energy vs. Collector Current IGBT-inverter VCE=600V RG=18 Ω VGE=±15V TVj =125°C 100 60 40 0 200 400 600 800 1000 1200 VCE（V） Figure6. Reverse Biased Safe Operating Area IGBT-inverter 1400 20 40 100 TVj =125°C TVj =25°C VCE =20V Eoff Eon 12 10 9 7 6 5 8 0 4 8 20 RG=18Ω VGE=±15V TVj =125°C 12 RG（Ω） Figure8. Switching Energy vs. Gate Resistor Diode -inverter VF（V） Figure7. Diode Forward Characteristics Diode -inverter 0.5 0 1.0 1.5 0 0 . 2 10 20 30 40 0 20 60 100 40 TVj =25°C TVj =125°C 6.0 4.0 2.0 0 8.0 11 2.5 IF=50 A VCE=600V TVj =125°C 60 80 80 16 10 80 80 |
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