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IRGP4620D-EPBF Datasheet(PDF) 6 Page - International Rectifier

Part # IRGP4620D-EPBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4620D-EPBF Datasheet(HTML) 6 Page - International Rectifier

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IRGS/B/P4620D/EPbF
6
www.irf.com
© 2013 International Rectifier
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October 29, 2013
0
500
1000
1500
diF /dt (A/µs)
200
400
600
800
1000
1200
1400
10
Ω
22
Ω
100
Ω
47
Ω
12A
24A
6.0A
8
1012
141618
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
20
30
40
50
60
70
80
90
100
110
120
Fig. 21
- Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
0
10
20
30
IF (A)
0
50
100
150
200
250
300
350
400
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
0
20
40
60
80
100
VCE (V)
10
100
1000
10000
Cies
Coes
Cres
Fig. 22
- Typ. Diode ERR vs. IF
TJ = 175°C
0
500
1000
1500
diF /dt (A/µs)
0
5
10
15
20
25
Fig. 20
- Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C
0
5
10
15
20
25
30
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES = 300V
VCES = 400V
Fig. 23
- VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 24
- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 25
- Typical Gate Charge vs. VGE
ICE = 12A; L = 600µH


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