PESD1LIN

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 31 May 2011

4 of 12

NXP Semiconductors

PESD1LIN

LIN-bus ESD protection diode

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

s exponential decay waveform according to IEC 61000-4-5.

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

reverse standoff voltage

PESD1LIN (15 V)

-

-

15

V

PESD1LIN (24 V)

-

-

24

V

reverse leakage current

PESD1LIN (15 V)

-

< 1

50

nA

PESD1LIN (24 V)

-

< 1

50

nA

breakdown voltage

PESD1LIN (15 V)

17.1

18.9

20.3

V

PESD1LIN (24 V)

25.4

27.8

30.3

V

diode capacitance

-

13

17

pF

clamping voltage

[1]

PESD1LIN (15 V)

-

-

25

V

-

-

44

V

PESD1LIN (24 V)

-

-

40

V

-

-

70

V

differential resistance

PESD1LIN (15 V)

-

-

225



PESD1LIN (24 V)

-

-

300



Fig 3.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

006aaa164

(W)

10

10

0

200

150

50

100

001aaa193

0.4

0.8

1.2

0