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IRSM808-105MHTR Datasheet(PDF) 3 Page - International Rectifier |
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IRSM808-105MHTR Datasheet(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRSM808-105MH 3 www.irf.com © 2013 International Rectifier September 6, 2013 Static Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM Symbol Description Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 500 --- --- V TJ=25°C, ILK=3mA ILKH Leakage Current of High Side FET’s in Parallel --- 15 --- A TJ=25°C, VDS=500V ILKL Leakage Current of Low Side FET’s in Parallel Plus Gate Drive IC --- 20 --- A TJ=25°C, VDS=500V --- 0.58 0.8 TJ=25°C, VCC=10V, Id = 6A RDS(ON) Drain to Source ON Resistance --- 1.60 --- TJ=150°C, VCC=10V, Id = 6A (Note 4) VSD Diode Forward Voltage --- 0.85 --- V TJ=25°C, VCC=10V, Id = 6A VHIN/LIN Logic “1” input voltage for HIN & “0” for LIN 2.2 --- --- V VHIN/LIN Logic “0” input voltage for HIN & “1” for LIN --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS Supply Under-Voltage, Positive Going Threshold 8 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 7.4 8.2 9.0 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock- Out Hysteresis --- 0.7 --- V IQBS Quiescent VBS Supply Current VIN=0V --- 45 70 A IQCC Quiescent VCC Supply Current VIN=0V --- 1100 1800 A IHIN+ Input Bias Current VIN=4V --- 5 20 A ILIN- Input Bias Current VIN=0V --- 1 2 A RBR Internal Bootstrap Equivalent Resistor Value --- 200 --- TJ=25°C Note 4: Characterized, not tested at manufacturing MOSFET Avalanche Characteristics Symbol Description Min Typ Max Units Conditions EAS Single Pulse Avalanche Energy --- 216 --- mJ TJ=25°C, L=3mH, VDD=100V, IAS=12A, TO-220 package. Dynamic Electrical Characteristics VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified. Symbol Description Min Typ Max Units Conditions TON Input to Output Propagation Turn-On Delay Time --- 0.8 1.3 s ID=1mA, V +=50V TOFF Input to Output Propagation Turn-Off Delay Time --- 0.8 1.3 s DT Built-in Deadtime 0.9 1.3 --- s Gate Driver; VLIN=0 & VHIN=5V with no external deadtime TFIL,IN Input Filter Time (HIN, LIN) --- 300 --- ns |
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