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OM60N10SC Datasheet(PDF) 4 Page - International Rectifier |
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OM60N10SC Datasheet(HTML) 4 Page - International Rectifier |
4 / 8 page OM55N10SA (T C = 25°C unless otherwise specified) Avalanche Characteristics Min. Typ. Max. Units Test Conditions I AR Avalanche Current 55 A (repetitive or non-repetitive,T J = 25°C) E AS Single Pulse Avalanche Energy 600 mJ (starting T J = 25°C, I D = IAR, VDD = 25 V) E AR Repetitive Avalanche Energy 100 mJ (pulse width limited by T j max, d < 1%) I AR Avalanche Current 37 A (repetitive or non-repetitive, T J = 100°C) Electrical Characteristics - OFF V (BR)DSS Drain-Source 100 V I D = 250 µA, VGS = 0 Breakdown Voltage I DSS Zero Gate Voltage 250 µA V DS = Max. Rat. Drain Current (V GS = 0) 1000 µA V DS = Max. Rat. x 0.8, TC = 125°C I GSS Gate-Body Leakage ±100 nA V GS = ±20 V Current (V DS = 0) Electrical Characteristics - ON V GS(th) Gate Threshold Voltage 2 4 V V DS = VGS, ID = 250 µA R DS(on) Static Drain-Source On 0.035 V GS = 10 V, ID = 30 A Resistance 0.070 T C = 100°C I D(on) On State Drain Current 55 A V DS > ID(on) x RDS(on)max, VGS = 10 V Electrical Characteristics - Dynamic g fs Forward Transconductance 25 S V DS > ID(on) x RDS(on)max, ID= 30 A C ies Input Capacitance 4000 pF V DS = 25 V C oes Output Capacitance 1100 pF V GS = 0 C res Reverse Transfer Capacitance 250 pF f = 1 mHz Electrical Characteristics - Switching On T d(on) Turn-On Time 90 nS V DD = 80 V, ID = 30 A t r Rise Time 270 nS R G = 50 , VGS = 10 V (di/dt) on Turn-On Current Slope 270 A/µS V DD = 80 V, ID = 30 A R G = 50 , VGS = 10 V Q g Total Gate Charge 120 nC V DD = 80 V, ID = 30 A, VGS = 10 V Electrical Characteristics - Switching Off T r(Voff) Off Voltage Rise Time 200 nS V DD = 80 V, ID = 30 A t f Fall Time 210 nS R G = 50 , VGS = 10 V t cross Cross-Over Time 410 nS Electrical Characteristics - Source Drain Diode I SD Source Drain Current 55 A I SDM* Source Drain Current (pulsed) 180 A V SD Forward On Voltage 1.5 V I SD = 55 A, VGS = 0 t rr Reverse Recovery Time 180 nS I SD = 55 A, di/dt = 100 A/µs V R = 80 V Q rr Reverse Recovery Charge 1.8 µC I RRM Reverse Recovery Current 11 A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. OM75N06SC (T C = 25°C unless otherwise specified) Avalanche Characteristics Min. Typ. Max. Units Test Conditions I AR Avalanche Current 70 A (repetitive or non-repetitive,T J = 25°C) E AS Single Pulse Avalanche Energy 900 mJ (starting T J = 25°C, I D = IAR, VDD = 25 V) E AR Repetitive Avalanche Energy 200 mJ (pulse width limited by T j max, d < 1%) I AR Avalanche Current 40 A (repetitive or non-repetitive, T J = 100°C) Electrical Characteristics - OFF V (BR)DSS Drain-Source 60 V I D = 250 µA, VGS = 0 Breakdown Voltage I DSS Zero Gate Voltage 250 µA V DS = Max. Rat. Drain Current (V GS = 0) 1000 µA V DS = Max. Rat. x 0.8, TC = 125°C I GSS Gate-Body Leakage ±100 nA V GS = ±20 V Current (V DS = 0) Electrical Characteristics - ON V GS(th) Gate Threshold Voltage 2 4 V V DS = VGS, ID = 250 µA R DS(on) Static Drain-Source On 0.016 V GS = 10 V, ID = 40 A Resistance 0.032 T C = 100°C I D(on) On State Drain Current 75 A V DS > ID(on) x RDS(on)max, VGS = 10 V Electrical Characteristics - Dynamic g fs Forward Transconductance 25 S V DS > ID(on) x RDS(on)max, ID= 40 A C ies Input Capacitance 4100 pF V DS = 25 V C oes Output Capacitance 1800 pF V GS = 0 C res Reverse Transfer Capacitance 420 pF f = 1 mHz Electrical Characteristics - Switching On T d(on) Turn-On Time 190 nS V DD = 25 V, ID = 40 A t r Rise Time 900 nS R G = 50 , VGS = 10 V (di/dt) on Turn-On Current Slope 150 A/µS V DD = 25 V, ID = 40 A R G = 50 , VGS = 10 V Q g Total Gate Charge 130 nC V DD = 25 V, ID = 40 A, VGS = 10 V Electrical Characteristics - Switching Off T r(Voff) Off Voltage Rise Time 360 nS V DD = 40 V, ID = 75 A t f Fall Time 280 nS R G = 50 , VGS = 10 V t cross Cross-Over Time 600 nS Electrical Characteristics - Source Drain Diode I SD Source Drain Current 75 A I SDM* Source Drain Current (pulsed) 300 A V SD Forward On Voltage 1.5 V I SD = 75 A, VGS = 0 t rr Reverse Recovery Time 120 nS I SD = 75 A, di/dt = 100 A/µs V R = 25 V Q rr Reverse Recovery Charge 0.45 µC I RRM Reverse Recovery Current 6.5 A *Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%. |
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