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SI1029X-T1 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # SI1029X-T1
Description  Complementary N- and P-Channel 60-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1029X-T1 Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 71435
S-80643-Rev. B, 24-Mar-08
Vishay Siliconix
Si1029X
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
TJ = 25 °C
TJ = 125 °C
VSD -Source-to-Drain Voltage (V)
10
TJ = - 55 °C
VGS = 0 V
On-Resistance vs. Gate-to-Source Voltage
0
1
2
3
4
5
0246
8
10
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
Threshold Voltage Variance Over Temperature
-0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ -Junction Temperature (°C)


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