Datasheet

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

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TSZ02201-0P5P0BH00010-1-2

© 2013 ROHM Co., Ltd. All rights reserved.

25.Nov.2013 Rev.001

TSZ22111 • 14 • 001

www.rohm.com

Gate Driver Providing Galvanic isolation Series

Isolation voltage 2500Vrms

1ch Gate Driver Providing Galvanic Isolation

BM60014FV-C

General Description

The BM60014FV-C is a gate driver with an isolation

voltage of 2500Vrms, I/O delay time of 120ns, and

minimum input pulse width of 70ns. It incorporates the

fault signal output functions, Under-voltage Lockout

(UVLO) function and Miller clamp function.

Features



Providing Galvanic Isolation



Active Miller Clamping



Fault signal output function



Under-voltage Lockout function



AEC-Q100 Qualified

Applications

 IGBT Gate Driver

 MOSFET Gate Driver

Key Specifications



Isolation voltage:

2500Vrms



Maximum gate drive voltage:

24V



I/O delay time:

120ns(Max)



Minimum input pulse width:

70ns(Max)

Package

W(Typ) x D(Typ) x H(Max)

SSOP-B20W

6.50mm x 8.10mm x 2.01mm

Typical Application Circuits

1pin

GND1

NC

NC

VCC1

INA

INB

XFLT

NC

NC

GND1

NC

GND2

NC

VCC2

OUT

MC

NC

NC

GND2

NC

UVLO1

UVLO1

Pulse

Generator

UVLO2

S

Q

R

Pre-

driver

+

-

Figure 1. Application Circuits (IGBT Gate Driver)

1pin

GND1

NC

NC

VCC1

INA

INB

XFLT

NC

NC

GND1

NC

GND2

NC

VCC2

OUT

MC

NC

NC

GND2

NC

UVLO1

UVLO1

Pulse

Generator

UVLO2

S

Q

R

Pre-

driver

+

-

Figure 2. Application Circuits (MOSFET Gate Driver)