CJD112 NPN

CJD117 PNP

SURFACE MOUNT SILICON

COMPLEMENTARY

POWER DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD112 and

CJD117 are complementary silicon power Darlington

transistors manufactured in a surface mount package

designed for low speed switching and amplifier

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

2.0

A

Peak Collector Current

ICM

4.0

A

Continuous Base Current

IB

50

mA

Power Dissipation

PD

20

W

Power Dissipation (TA=25°C)

PD

1.75

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

6.25

°C/W

Thermal Resistance

ΘJA

71.4

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=50V

20

μA

ICEV

VCE=80V, VBE(off)=1.5V

10

μA

ICEV

VCE=80V, VBE(off)=1.5V, TC=125°C

500

μA

ICBO

VCB=80V

10

μA

ICBO

VCB=100V

20

μA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=30mA

100

V

VCE(SAT)

IC=2.0A, IB=8.0mA

2.0

V

VCE(SAT)

IC=4.0A, IB=40mA

3.0

V

VBE(SAT)

IC=4.0A, IB=40mA

4.0

V

VBE(ON)

VCE=3.0V, IC=2.0A

2.8

V

hFE

VCE=3.0V, IC=0.5A

500

hFE

VCE=3.0V, IC=2.0A

1000

12000

hFE

VCE=3.0V, IC=4.0A

200

fT

VCE=10V, IC=750mA, f=1.0MHz

25

MHz

Cob

VCB=10V, IE=0, f=0.1MHz (CJD112)

100

pF

Cob

VCB=10V, IE=0, f=0.1MHz (CJD117)

200

pF

DPAK CASE

R3 (21-January 2013)

www.centr a lsemi.com